Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields

被引：45

作者：

Das, MK ^{[1
]}

Sumakeris, JJ ^{[1
]}

Hull, BA ^{[1
]}

Richmond, J ^{[1
]}

Krishnaswami, S ^{[1
]}

Powell, AR ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

PiN diode; high voltage; V-f drift; BPD; device yield;

D O I：

10.4028/www.scientific.net/MSF.483-485.965

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 W 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yielding process with V-F as low as 3.9 V @ 100 A/cm(2). Furthermore, incorporation of two independent basal plane dislocation reduction processes (LBPD 1 and LBPD 2) have produced a large number of devices that exhibit a high degree of forward voltage stability with encouraging reverse blocking capability. This results in a total yield (forward, 10 W blocking, and drift) of &GT; 20% for 8.7 mm x 8.7 mm power PiN diode chips-the largest SiC chip reported to date.

引用

页码：965 / 968

页数：4

共 4 条

[1]

DAS MK, 2003, INT SEM DEV RES S WA

[2]

HULL BA, 2004, EL MAT C S BEND IN J

[3] High-power SiC diodes: Characteristics, reliability and relation to material defects [J].

Lendenmann, H ;

Dahlquist, F ;

Bergman, JP ;

Bleichner, H ;

Hallin, C .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1259-1264

[4] Approaches to stabilizing the forward voltage of bipolar SiC devices [J].

Sumakeris, JJ ;

Das, M ;

Hobgood, HM ;

Müller, SG ;

Paisley, MJ ;

Ha, S ;

Skowronski, M ;

Palmour, JW ;

Carter, CH .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :1113-1116

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