Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates

被引：134

作者：

Lin, CC ^{[1
]}

Chen, HP ^{[1
]}

Liao, HC ^{[1
]}

Chen, SY ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 18期

关键词：

D O I：

10.1063/1.1904715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoelectronic characteristics are performed in well-aligned hydrogen-plasma ZnO nanorods grown on 4 in. flexible organic substrates buffered with ZnO film. Enhancement of photoluminescence (PL) properties due to H-2 plasma treatment by a factor of 60 times for relative intensity ratio (ultraviolet emission to deep level emission) has been observed. X-ray photoelectron spectroscopy analysis reveals that the enhanced PL property is attributed to both defect passivation and modification on the surface region of ZnO nanorods due to the absorption of hydrogen ions. However, the PL spectra of H-2 plasma ZnO nanorods can be restored to the original state of ZnO nanorods by thermal annealing process. The current-voltage measurements suggest that the n-type ZnO nanorods with H-2 plasma treatment present a higher conductivity of about 5-6 orders of magnitude than the nonplasma ZnO nanorods. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 14 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] SURFACE EFFECTS ON LOW-ENERGY CATHODOLUMINESCENCE OF ZINC-OXIDE [J].

BYLANDER, EG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1188-1195

[3] Growth of single crystal ZnO nanowires using sputter deposition [J].

Chiou, WT ;

Wu, WY ;

Ting, JM .

[4] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[5] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[6] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

FAN, JCC ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531

[7] Low-temperature wafer-scale production of ZnO nanowire arrays [J].

Greene, LE ;

Law, M ;

Goldberger, J ;

Kim, F ;

Johnson, JC ;

Zhang, YF ;

Saykally, RJ ;

Yang, PD .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034

[8]

Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO

[9]

2-H

[10] Synthesis and optoelectronic properties of arrayed p-type ZnO nanorods grown on ZnO film/Si wafer in aqueous solutions [J].

Lin, CC ;

Chen, HP ;

Chen, SY .

CHEMICAL PHYSICS LETTERS, 2005, 404 (1-3) :30-34

← 1 2 →