Optical and electrical properties of thallium sulphide and TlxMySz (M=Cu, Bi, Sb) thin films

被引：17

作者：

Estrella, V ^{[1
]}

Mejía, R ^{[1
]}

Nair, MTS ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, CIE, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico

来源：

MODERN PHYSICS LETTERS B | 2001年 / 15卷 / 17-19期

关键词：

D O I：

10.1142/S0217984901002427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tl2S thin films (0.95 mum-1 mum) were deposited from chemical bath containing thallium nitrate and thiourea. These films possess an indirect optical band gap of about 1 eV. Multi-layer films: Tl2S-CuS, Tl2S-Bi2S3 and Tl2S-Sb2S3 films were prepared, which when annealed at 300 degreesC led to the formation of CuTlS2 (tetragonal, E-g,E-dir = 1.25 eV), Bi2Tl4S5 (orthorhombic, E-g,E-dir = 2.05 eV), TlSbS2. (triclinic, E-g,E-dir 1.92 eV), as confirmed by XRD. Optical band gap of 1.4 eV - 2 eV suggests possible application as absorber materials in solar cells.

引用

页码：737 / 740

页数：4

共 3 条

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NAIR, MTS ;

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[2] Chemically deposited Sb2S3 and Sb2S3-CuS thin films [J].

Nair, MTS ;

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Nair, PK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (06) :2113-2120

[3] OPTIMIZATION OF CHEMICALLY DEPOSITED CUXS SOLAR CONTROL COATINGS [J].

NAIR, PK ;

GARCIA, VM ;

FERNANDEZ, AM ;

RUIZ, HS ;

NAIR, MTS .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1991, 24 (03) :441-449

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