Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics

被引：7

作者：

Mauk, MG ^{[1
]}

Shellenbarger, ZA ^{[1
]}

Cox, JA ^{[1
]}

Tata, AN ^{[1
]}

Warden, TG ^{[1
]}

Dinetta, LC ^{[1
]}

Mueller, RL ^{[1
]}

机构：

[1] AstroPower Inc, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916061

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (> 50 micron) layers to form "virtual" substrates. We are developing cell fabrication technologies to realize series-interconnected InGaAsSb and InAsSbP TPV cell arrays for high-voltage "minimodules" by transferring epitaxial device structures to insulating surrogate substrates.

引用

页码：1028 / 1031

页数：4

共 16 条

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[2]

BENNER JP, 1996, AM I PHYSICS C P, V358

[3]

Cody GD, 1999, AIP CONF PROC, V460, P58, DOI 10.1063/1.57845

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