Luminescence enhancement of ZnGa2O4:Mn2+ by Ge4+ and Li+ doping

被引：37

作者：

Kim, JS ^{[1
]}

Park, HL

Kim, GC

Kim, TW

Hwang, YH

Kim, HK

Mho, SI

Han, SD

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Korea Univ Technol & Educ, Sch Liberal Arts, Cheonan 330708, South Korea

[3] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea

[4] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea

[5] Ajou Univ, Dept Mol Sci & Technol, Suwon 442749, South Korea

[6] Korea Inst Energy Res, Dept New Mat, Taejon 305600, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 09期

关键词：

zinc gallate; X-ray scattering; optical properties; luminescence;

D O I：

10.1016/S0038-1098(03)00238-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Structural and optical properties of ZnGa2O4:Ge4+ and ZnGa2O4:Ge4+, Li+, Mn2+ phosphors were investigated by using X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL) measurements. The XRD patterns show that Ge-doped ZnGa2O4 has a spinel phase and its lattice constant increases with respect to ZnGa2O4. Emission wavelength shifts from 400 to 360 nm in comparison with ZnGa2O4 when Ge is doped in ZnGa2O4 and a peak related with oxygen defect was observed in Ge-doped ZnGa2O4. The CL luminance of ZnGa2O4:Ge4+, Li+, Mn2+ phosphors is seven times brighter than that of ZnGa2O4:Mn2+. This drastic luminance improvement can be attributed to Ge doping in ZnGa2O4 acting as donor ion and Li doping resulting in increasing conductivity of ZnGa2O4. These results indicate that ZnGa2O4:Ge4+, Li+, Mn2+ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：515 / 518

页数：4

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