Formation of a few nanometer wide holes in membranes with a dual beam focused ion beam system

被引:40
作者
Schenkel, T [1 ]
Radmilovic, V [1 ]
Stach, EA [1 ]
Park, SJ [1 ]
Persaud, A [1 ]
机构
[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期
关键词
D O I
10.1116/1.1622935
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When nanometer-scale holes (diameters of 50 to a few hundred nm) are imaged in a scanning electron microscope (SEM) at pressures in the 10(-5) to 10(-6) Torr range, hydrocarbon deposits build up and result in the closing of holes within minutes of imaging. Additionally, electron or ion beam assisted deposition of material from a gas source allows the closing of holes with films of platinum or tetraethylorthosilicate oxide. In an instrument equipped both with a focused ion beam, and a SEM, holes can be formed and then covered with a thin film to form nanopores with controlled openings, ranging down to only a few nanometers, well below resolution limits of primary beams. (C) 2003 American Vacuum Society.
引用
收藏
页码:2720 / 2723
页数:4
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