Spin relaxation in InAs nanowires studied by tunable weak antilocalization -: art. no. 205328

被引：119

作者：

Hansen, AE ^{[1
]}

Björk, MT ^{[1
]}

Fasth, C ^{[1
]}

Thelander, C ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys Nanometer Consortium, Lund, Sweden

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.71.205328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a low-temperature magnetoconductance study to characterize the electrical and spin transport properties of n-type InAs nanowires grown by chemical beam epitaxy. A gate-controlled crossover from weak localization to weak antilocalization is observed. The measured magnetoconductance data agrees well with theory for one-dimensional quasi-ballistic systems and yields a spin relaxation length which decreases with increasing gate voltage.

引用

页数：5

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