A full Cu damascene metallization process for sub-0.18μm RF CMOS SoC high Q inductor and MIM capacitor application at 2.4GHz and 5.3GHz

被引：19

作者：

Lin, CC ^{[1
]}

Hsu, HM ^{[1
]}

Chen, YH ^{[1
]}

Shih, T ^{[1
]}

Jang, SM ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Res Dev Ctr, Hsinchu, Taiwan

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A full Cu damascene metallization process was successfully developed for simultaneous formation of sub-0.18um RF CMOS passive components including circular spiral inductor and MIM capacitor. High quality factor inductor with Q=18 at 1.2nH was achieved by applying highly uniform Cu CMP process on polishing microns of Cu. Less than 2% Rs uniformity and 70 nm dishing on 95% density Cu line were achieved on 8" wafers for finished 2.5um thick Cu inductor. Q factor does been doubled from 6 to 13 at 2.4GHz when alternating the 3.5 turns inductor material from Al to Cu. The low sheet resistance on the inductor top plate allows for good Q value. Pre-CMP anneal condition was found crucial for final Cu surface morphology which in terms affecting the breakdown characteristic of the MIM capacitor. In this work, it was found that stressing the Cu with pre-CMP high temperature anneal can relief the Cu surface hillock formation after the MIM insulator deposition. As a result, with the pre-CMP high temperature anneal,the breakdown voltage can be improved 4 times better than the one with no or low temperature pre-CMP anneal. The breakdown field improved is calculated to be up to 6.6M V/cm This power MOS can be used for both Bluetooth (around 2.4GHz) and wireless LAN (around 5.3GHz) applications by inductor layout optimization on peak-Q value at specified frequency.

引用

页码：113 / 115

页数：3