Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

被引：335

作者：

Lauffer, P. ^{[1
]}

Emtsev, K. V. ^{[1
]}

Graupner, R. ^{[1
]}

Seyller, Th. ^{[1
]}

Ley, L. ^{[1
]}

Reshanov, S. A. ^{[2
]}

Weber, H. B. ^{[2
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.77.155426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work, we have studied the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene (FLG) on SiC(0001) by scanning tunneling microscopy and spectroscopy (STS). We show that a quantitative evaluation of the roughness induced by the interface is a tool for determining the layer thickness of FLG. We present and interpret thickness dependent tunneling spectra, which can serve as an additional fingerprint for the determination of the layer thickness. By performing spatially resolved STS, we find evidence that the charge distribution in bilayer graphene is inhomogeneous.

引用

页数：10

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