Large-signal analysis of analog intensity modulation of semiconductor lasers

被引:30
作者
Ahmed, Moustafa [1 ]
El-Lafi, Ali [2 ]
机构
[1] Menia Univ, Fac Sci, Dept Phys, El Minia 61519, Egypt
[2] Acad Grad Studies, Sch Basic Sci, Dept Phys, Tripoli, Libya
关键词
analog modulation; numerical simulation; semiconductor laser;
D O I
10.1016/j.optlastec.2007.12.001
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Large-signal analog intensity modulation of semiconductor lasers (SLs) is characterized based on numerical integration of the rate equations. The modulation dynamics are classified into seven types with regular and irregular signals. The classification is made in terms of the time trajectory of the laser intensity, phase portrait, and fast Fourier transform (FFT) spectrum. The operating region of each type is defined in a diagram of the modulation index versus modulation frequency. The accuracy of applying the approximate small-signal analysis to study analog modulation is assessed. The validity of identifying the dynamic types by the large-signal modulation response is examined. The laser emits continuous and regular signals under weak modulation. When the modulation index exceeds one half, the laser emits picosecond-pulses. Under strong modulation with frequencies around the relaxation frequency, both continuous and pulsed signals exhibit period-doubling. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:809 / 819
页数:11
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