Review of the Shockley-Ramo theorem and its application in semiconductor gamma-ray detectors

被引：381

作者：

He, Z ^{[1
]}

机构：

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 463卷 / 1-2期

关键词：

Shockley-Ramo theorem; radiation detectors; single polarity charge sensing; X- and gamma-ray spectrometers; wide band-gap semiconductors; position sensitive detectors;

D O I：

10.1016/S0168-9002(01)00223-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Shockley-Ramo theorem is reviewed based on the conservation of energy. This review shows how the energy is transferred from the bias supplies to the moving charge within a device. In addition, the discussion extends the original theorem to include cases in which a constant magnetic field is present, as well as when the device medium is heterogeneous. The rapid development of single polarity charge sensing techniques implemented in recent years on semiconductor gamma -ray detectors are summarized, and a fundamental interpretation of these techniques based on the Shockley-Ramo theorem is presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：250 / 267

页数：18

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