Dual high-k gate dielectric with poly gate electrode:: HfSiON on nMOS and Al2O3 capping layer on pMOS

被引：39

作者：

Li, HJ ^{[1
]}

Gardner, MI ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 07期

关键词：

Al2O3; dielectric devices; dielectric films; HfSiON;

D O I：

10.1109/LED.2005.85.1093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel dual high-kappa approach, different high-kappa. dielectrics in nMOS and pMOS, with poly Si gate electrode is introduced. By turning the Fermi-pinning effect into an advantage, this dual high-kappa. approach achieved a lower V-tp and a symmetrical V-tn /V-tp over a wide range of channel lengths for potential high-kappa/poly Si CMOS application. In addition to the V-t control, this approach also can improve the drive current ratio between nMOS and pMOS, which would further scale the CMOS area by reducing the pMOS width.

引用

页码：441 / 444

页数：4