Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight

被引：17

作者：

Allen, C. R. ^{[1
]}

Woodall, J. M. ^{[1
]}

Jeon, J. -H. ^{[1
]}

机构：

[1] Purdue Univ, W Lafayette, IN 47907 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 09期

关键词：

Anti-reflection; Gallium phosphide; PMMA; CPV;

D O I：

10.1016/j.solmat.2011.05.034

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1 x and 10.7 x in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2655 / 2658

页数：4

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