Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells

被引：33

作者：

Chia, CH

Makino, T ^{[1
]}

Segawa, Y

Kawasaki, M

Ohtomo, A

Tamura, K

Koinuma, H

机构：

[1] Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[3] Tokyo Inst Technol, Frontier Collaborat Res Lab, Yokohama, Kanagawa 2268503, Japan

[4] Tohoku Univ, Dept Phys, Sendai, Miyagi 980, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 07期

关键词：

D O I：

10.1063/1.1396827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A set of ZnO/Mg0.12Zn0.88O multiple quantum wells (MQWs) with well widths, L-w, varying from 6.91 to 46.5 Angstrom has been grown by laser molecular-beam epitaxy. We estimated the L-w dependence of the radiative and nonradiative recombination times of localized excitons at 5 K. Suppression of quantum efficiency can be avoided even in the MQWs having small L(w)s studied in this work. Effects of excitonic localization are discussed in order to explain the L-w dependence of radiative recombination time at 5 K. (C) 2001 American Institute of Physics.

引用

页码：3650 / 3652

页数：3

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