Effect of nonstoichiometry on the thermoelectric properties of GeBi4Te7

被引:35
作者
Kuznetsov, VL [1 ]
Kuznetsova, LA [1 ]
Rowe, DM [1 ]
机构
[1] Cardiff Univ, NEDO Lab Thermoelect Engn, Cardiff, S Glam, Wales
关键词
D O I
10.1063/1.369662
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polycrystalline samples of GeBi4Te7 with different compositional deviations from stoichiometry have been prepared and characterized by Seebeck coefficient and electrical resistivity measurements over the temperature range 100-750 K. At room temperature all samples exhibit n-type conductivity and a high concentration of electrons in the range 1.7x10(19)-2.4x10(20) cm(-3). The width of the energy band gap of GeBi4Te7 was 0.21+/-0.02 eV as determined from the temperature dependence of electrical resistivity in the intrinsic region. A dominant point defects model is proposed to explain the influence of compositional nonstoichiometry on the transport properties. (C) 1999 American Institute of Physics.
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页码:3207 / 3210
页数:4
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