The electronic conduction mechanism in barium strontium titanate thin films

被引：160

作者：

Zafar, S ^{[1
]}

Jones, RE ^{[1
]}

Jiang, B ^{[1
]}

White, B ^{[1
]}

Kaushik, V ^{[1
]}

Gillespie, S ^{[1
]}

机构：

[1] Motorola Inc, Mat Res & Strateg Technol, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the literature, the Schottky emission equation is widely used to describe the conduction mechanism in perovskite-type titanate thin films. Though the equation provides a good fit to the leakage current data, the extracted values of the Richardson and dielectric constants are inconsistent with their experimental values. In this work, a modified Schottky equation is applied. This equation resolves the difficulties associated with the standard Schottky equation. Also, the electronic mobility in thin films of barium strontium titanate is reported. (C) 1998 American Institute of Physics. [S0003-6951(98)00650-0].

引用

页码：3533 / 3535

页数：3

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