Manufacturing and reliability improvements in Metal-Oxide-Metal Capacitors - MOMCAPs

被引:4
作者
Lowell, L [1 ]
机构
[1] Analog Devices Inc, Wilmington, MA 01887 USA
来源
ASMC 98 PROCEEDINGS - 1998 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: THEME - SEMICONDUCTOR MANUFACTURING: MEETING THE CHALLENGES OF THE GLOBAL MARKETPLACE | 1998年
关键词
D O I
10.1109/ASMC.1998.731550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metal-Oxide-Metal Capacitors, MOMCAPs, have historically demonstrated less than optimal leakage and breakdown characteristics and yields. Additionally, the Cpk for capacitance is low. Any previous work done to improve the dielectric uniformity has resulted in further degradation of the capacitor characteristics. In this paper we will show that the parametric and reliability characteristics are very dependent on the bottom plate material. Our standard Ti bottom plate interacts with the capacitor dielectric resulting in degraded performance. That interaction renders a more uniform dielectric film unusable. We have developed a MOMCAP using TiW as the bottom plate electrode, which minimizes those interactions and improves capacitor characteristics.
引用
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页码:181 / 186
页数:6
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