Donor-donor binding in semiconductors: Engineering shallow donor levels for ZnTe

被引：22

作者：

Janotti, A ^{[1
]}

Wei, SH ^{[1
]}

Zhang, SB ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 17期

关键词：

D O I：

10.1063/1.1622791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by combining donor with donor. Using first-principles band structure method, we demonstrated this concept with n-type doping in ZnTe. For example, we find that the Br-Te-Sn-Zn pair has a binding energy of 0.9 eV and a shallow epsilon(+/0) donor level at 70 meV below the conduction-band minimum, compared to 240 meV for the isolated Br-Te impurity. (C) 2003 American Institute of Physics.

引用

页码：3522 / 3524

页数：3

共 19 条

[1] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].