Titanium dioxide for solar-hydrogen II. Defect chemistry

被引:95
作者
Nowotny, J. [1 ]
Bak, T. [1 ]
Nowotny, M. K. [1 ]
Sheppard, L. R. [1 ]
机构
[1] Univ New S Wales, Sch Mat Sci & Engn, Ctr Mat Res Energy Convers, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
titanium dioxide; defect chemistry; nonstiochiometry; electronic structure;
D O I
10.1016/j.ijhydene.2006.09.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The present work considers defect disorder of TiO2 and the related electrical properties, including electrical conductivity and thermoelectric power, at elevated temperatures. Defect chemistry of TiO2 is described in terms of the relationships between the concentration of defects and oxygen activity. These relationships may be used for the imposition of controlled defect disorder and the related functional properties of TiO2, including electronic structure and charge transport. It is shown that defect chemistry may be used as a framework for tailoring the photoelectrochemical properties of TiO2 in order to achieve those properties required for optimised photoelectrode performance in solarhydrogen generation. Defect chemistry may also be used for the imposition of surface active sites responsible for enhanced photoreactivity between the TiO2 surface and water. (c) 2006 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:2630 / 2643
页数:14
相关论文
共 37 条
[1]   Defect chemistry and semiconducting properties of titanium dioxide: I. Intrinsic electronic equilibrium [J].
Bak, T ;
Nowotny, J ;
Rekas, M ;
Sorrell, CC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (07) :1043-1056
[2]   Defect chemistry and semiconducting properties of titanium dioxide: II. Defect diagrams [J].
Bak, T ;
Nowotny, J ;
Rekas, M ;
Sorrell, CC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (07) :1057-1067
[3]   Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers [J].
Bak, T ;
Nowotny, J ;
Rekas, M ;
Sorrell, CC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (07) :1069-1087
[4]   ELECTRICAL-CONDUCTIVITY IN NON-STOICHIOMETRIC TITANIUM-DIOXIDE AT ELEVATED-TEMPERATURES [J].
BALACHANDRAN, U ;
EROR, NG .
JOURNAL OF MATERIALS SCIENCE, 1988, 23 (08) :2676-2682
[5]   THERMOELECTRIC-POWER IN REDUCED PURE AND NB-DOPED TIO2 RUTILE AT HIGH-TEMPERATURE [J].
BAUMARD, JF ;
TANI, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02) :373-382
[6]  
BAUMARD JF, 1975, REV INT HAUTES TEMP, V12, P321
[7]   ELECTRICAL-CONDUCTIVITY AND CHARGE COMPENSATION IN NB DOPED TIO2 RUTILE [J].
BAUMARD, JF ;
TANI, E .
JOURNAL OF CHEMICAL PHYSICS, 1977, 67 (03) :857-860
[8]   STUDY OF TI-O SYSTEM BETWEEN TI3O5 AND TIO2 AT HIGH-TEMPERATURE BY MEANS OF ELECTRICAL-RESISTIVITY [J].
BAUMARD, JF ;
PANIS, D ;
ANTHONY, AM .
JOURNAL OF SOLID STATE CHEMISTRY, 1977, 20 (01) :43-51
[9]   CHEMICAL DIFFUSIVITY OF OXYGEN IN OXYGEN DEFICIENT RUTILE FOR COMPOSITIONS CLOSE TO TIO2 [J].
BAUMARD, JF .
SOLID STATE COMMUNICATIONS, 1976, 20 (09) :859-862
[10]  
BAUMARD JF, 1977, J CHEM PHYS, V67, P867