Exciton-polariton ladder in a semiconductor microcavity

被引：15

作者：

Cao, H ^{[1
]}

Pau, S ^{[1
]}

Yamamoto, Y ^{[1
]}

Bjork, G ^{[1
]}

机构：

[1] KTH ELECTRUM,DEPT ELECT,S-16440 KISTA,SWEDEN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.8083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the;strongly coupled single cavity photon state and multiple discrete quantum-well exciton states in a semiconductor microcavity. The measured exciton-polariton dispersion curves feature multiple anticrossing. The theoretical simulation is in good agreement with the experimental result.

引用

页码：8083 / 8086

页数：4

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