InGaAs photodetector with integrated biasing network for mm-wave applications

被引：7

作者：

Trommer, D ^{[1
]}

Umbach, A ^{[1
]}

Unterborsch, G ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A waveguide integrated photodetector with an integrated biasing network is presented. The external responsivity amounts to 0.3 A/W while the bandwidth is 70 GHz. The integration of a matching resistor signicicantly reduces the output standing wave ratio. Application of the photodetector in an mm-wave system experiment is demonstrated. Linear operation at 64 GHz up to power levels of +10 dBm was achieved.

引用

页码：276 / 279

页数：4