Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector

被引：1

作者：

Hosako, I ^{[1
]}

Okumura, K ^{[1
]}

Yamashita-Yui, Y ^{[1
]}

Akiba, M ^{[1
]}

Hiromoto, N ^{[1
]}

机构：

[1] Minist Posts & Telecommun, Commun Res Lab, Tokyo 1848795, Japan

来源：

INFRARED ASTRONOMICAL INSTRUMENTATION, PTS 1-2 | 1998年 / 3354卷

关键词：

cryogenic FET; HJFET; low frequency noise; readout circuit; gate leakage current;

D O I：

10.1117/12.317310

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Deep cryogenic field effect transistors (FETs) which are able to operate under liquid helium temperatures have significant advantages over conventional cryogenic Silicon-Junction-FETs or Si-metal-oxide-semiconductor (MOS) -FETs as readout circuits of a far-infrared focal plane array detector: simple operation, simple system structures, and large transconductance. We report the testing of an InGaAs-channel heterojunction field effect transistor (HJFET) operating at 4.2 K designed for a readout circuit of ka cryogenically cooled far-infrared detector. In this report, we present current-voltage (I-V) characteristics, transconductance, low-frequency noise (LFN) characteristics, and the influence of the gate leakage current on the LFN characteristics of the HJFET. Input-referred noise voltage as low as a few hundred nanovolts at 1 Hz was measured for the HJFET with a 100 x 100 mu m(2) gate area. We discuss further possibilities for the fabrication of HJFETs with an extremely small input current of less than 10(-15) A.

引用

页码：281 / 288

页数：8