Donor impurities as a probe of electron correlations in a two-dimensional electron gas in high magnetic fields

被引:31
作者
Jiang, ZX [1 ]
McCombe, BD
Hawrylak, P
机构
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1103/PhysRevLett.81.3499
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Many-electron effects have been observed in far-infrared magnetospectroscopic studies of GaAs/AlGaAs multiple quantum wells (QWs), delta doped with Si donors in both well and barrier centers. With increasing excess electron densities in the QWs the negative donor ion (D-) singlet and triplet transitions are substantially blueshifted, exhibiting cusps at integer and fractional filling factors. At high magnetic fields the many-electron system appears to approach a collection of isolated two-electron D- ions. Exact diagonalization studies of donor and confined electrons show the importance of electron correlations and localization at high magnetic fields in understanding this behavior.
引用
收藏
页码:3499 / 3502
页数:4
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