Relationship between the ionization and oxidation potentials of molecular organic semiconductors

被引:685
作者
D'Andrade, BW
Datta, S
Forrest, SR [1 ]
Djurovich, P
Polikarpov, E
Thompson, ME
机构
[1] Princeton Univ, Dept Elect Engn, EQUAD B301, Princeton, NJ 08544 USA
[2] Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA
关键词
electrochemistry; photoelectron spectroscopy; organic thin film; dipole;
D O I
10.1016/j.orgel.2005.01.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A relationship between the energy of the highest occupied molecular orbital (HOMO) and the oxidation potential of molecular organic semiconductors is presented. Approximating molecules as dipoles consisting of a positively charged ion core surrounded by an electron cloud, the HOMO energy (E-HOMO) is calculated as that required to separate these opposite charges in a neutral organic thin film. Furthermore, an analysis of image charge forces on spherical molecules positioned near a conductive plane formed by the electrode in an electrochemical cell is shown to explain the observed linear relationship between E-HOMO and the oxidation potential. The E-HOMO's of a number of organic semiconductors commonly employed in thin film electronic devices were determined by ultraviolet photoemission spectroscopy, and compared to the relative oxidation potential (V-CV) measured using pulsed cyclic voltammetry, leading to the relationship E-HOMO = -(1.4 +/- 0.1) x (qV(CV)) - (4,6 +/- 0.08) eV, consistent with theoretical predictions. (c) 2005 Elsevier B.V. All rights reserved.
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页码:11 / 20
页数:10
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