Local photocurrent and resistivity measurements with micron resolution

被引：7

作者：

Hiltner, JF ^{[1
]}

Sites, JR ^{[1
]}

机构：

[1] Colorado State Univ, CSU Phys, Ft Collins, CO 80523 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915894

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The high resolution laser stepping apparatus recently developed at Colorado State University has been employed to investigate the response of CdTe-based solar cells to incident laser illumination with very high resolution. The local cell characteristics can be determined by measuring the photocurrent as a function of bias with various intensities and spot sizes. In addition, the high spatial resolution of the instrument makes it possible to examine local variations in resistivity, including regions containing localized defects and single grain boundaries. PSpice modeling of an equivalent circuit has been employed to fit individual apparent quantum efficiency (AQE) versus bias curves. It was determined that, while resistive effects are the dominant mechanism for local variations in photocurrent, high injection effects cannot be ignored when fitting the data.

引用

页码：543 / 546

页数：4