Pb/Si(111) investigation at the ultralow-coverage range

被引：23

作者：

GomezRodriguez, JM ^{[1
]}

Veuillen, JY ^{[1
]}

Cinti, RC ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA 103,E-28049 MADRID,SPAIN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.588443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The very early stages of Pb deposition on Si(111)7x7 surfaces have been studied by means of scanning tunneling microscopy. Variable temperature measurements combined with unusually long periods of imaging time have made it possible to analyze the dynamics of Pb atom pairs. The observations show that the pairs are actually mobile at room temperature within the half (7x7) unit cells where they are adsorbed. An activation energy of 0.40+/-0.04 eV has been measured for this thermally activated process. (C) 1996 American Vacuum Society.

引用

页码：1005 / 1009

页数：5

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