Atomically precise placement of single dopants in Si

被引：322

作者：

Schofield, SR ^{[1
]}

Curson, NJ ^{[1
]}

Simmons, MY ^{[1
]}

Ruess, FJ ^{[1
]}

Hallam, T ^{[1
]}

Oberbeck, L ^{[1
]}

Clark, RG ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.91.136104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with similar to1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

引用

页数：4

共 23 条

[1] EVIDENCE OF PAIRING AND ITS ROLE IN THE RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].

BOLAND, JJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1539-1542

[2] UNIQUE HYDRIDE CHEMISTRY ON SILICON-PH3 INTERACTION WITH SI(100)-(2X1) [J].

COLAIANNI, ML ;

CHEN, PJ ;

YATES, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (06) :2995-2998

[3] IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001) [J].

HAMERS, RJ ;

AVOURIS, P ;

BOZSO, F .

PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2071-2074

[4] Atomic-level spatial distributions of dopants on silicon surfaces: Toward a microscopic understanding of surface chemical reactivity [J].

Hamers, RJ ;

Wang, YJ ;

Shan, J .

APPLIED SURFACE SCIENCE, 1996, 107 :25-34

[5]

*INT TECHN ROADM S, 2001, TECH REP INT TECHN R

[6] A silicon-based nuclear spin quantum computer [J].

Kane, BE .

NATURE, 1998, 393 (6681) :133-137

[7] NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE [J].

LYDING, JW ;

SHEN, TC ;

HUBACEK, JS ;

TUCKER, JR ;

ABELN, GC .

APPLIED PHYSICS LETTERS, 1994, 64 (15) :2010-2012

[8] Dissociative adsorption of PH3 on the Si(001) surface -: art. no. 125321 [J].

Miotto, R ;

Srivastava, GP ;

Ferraz, AC .

PHYSICAL REVIEW B, 2001, 63 (12)

[9] GROWTH AND EQUILIBRIUM STRUCTURES IN THE EPITAXY OF SI ON SI(001) [J].

MO, YW ;

SWARTZENTRUBER, BS ;

KARIOTIS, R ;

WEBB, MB ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1989, 63 (21) :2393-2396

[10] High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy [J].

Modesti, S ;

Furlanetto, D ;

Piccin, M ;

Rubini, S ;

Franciosi, A .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1932-1934

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