Effect of O2 pressure on the preferred orientation of TiO2 films prepared by filtered arc deposition

被引:45
作者
Zhang, F [1 ]
Liu, XH [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
关键词
deposition process; Fourier transform infrared spectroscopy; titanium oxide; X-ray diffraction;
D O I
10.1016/S0040-6090(98)00573-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium oxide films were prepared by filtered are deposition, where a beam of titanium ions was generated by a filtered are evaporation source and reacted with O-2 in the vacuum chamber. A negative substrate bias of 400 V was added during film growth. The films were investigated by Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) methods. A IR absorption peak at about 500 cm(-1) was observed which is attributed to Ti-O bonds in a six-fold environment. A change from (002) to (101) preferred orientation of cm titanium oxide films with rutile type structure was observed with increasing O-2 prlssure from 4 x 10(-2) to 2 x 10(-1) Pa. The effect of O-2 pressure on the preferred orientation was discussed. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:171 / 174
页数:4
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