Three-Dimensional Topological Insulators in I-III-VI2 and II-IV-V2 Chalcopyrite Semiconductors

被引：142

作者：

Feng, Wanxiang ^{[1
]}

Xiao, Di ^{[2
]}

Ding, Jun ^{[1
]}

Yao, Yugui ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 01期

关键词：

HGTE QUANTUM-WELLS; SINGLE DIRAC CONE; PHASE; SURFACE; BI2TE3;

D O I：

10.1103/PhysRevLett.106.016402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using first-principles calculations within density functional theory, we investigate the band topology of ternary chalcopyrites of composition I-III-VI2 and II-IV-V-2. By exploiting adiabatic continuity of their band structures to the binary 3D-HgTe, combined with direct evaluation of the Z(2) topological invariant, we show that a large number of chalcopyrites can realize the topological insulating phase in their native states. The ability to host room-temperature ferromagnetism in the same chalcopyrite family makes them appealing candidates for novel spintronics devices.

引用

页数：4

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