High temperature oxidation behavior of SiC-coated C/C composites

被引:8
作者
Aoki, T [1 ]
Hatta, H
Kogo, Y
Fukuda, H
Goto, Y
Yarii, T
机构
[1] Sci Univ Tokyo, Fac Ind Sci & Technol, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan
[2] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan
[3] Tokyo Inst Polytech, Fac Engn, Dept Ind Chem, Atsugi, Kanagawa 2430297, Japan
[4] Japan Ultra High Temp Mat Res Inst, Tajimi 5070801, Japan
关键词
SiC coating; carbon/carbon composite; coating crack; oxidation behavior; oxygen diffusion;
D O I
10.2320/jinstmet1952.62.4_404
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
High-temperature oxidation behavior of the SiC-coated Carbon/Carbon (C/C) composites was examined in the temperature range between 873 and 2273 It under open air environment. From the oxidation tests, three kinds of oxidation regimes were identified: i.e., oxidation reaction rate controlling regime; 873 K to 1173 K, oxygen diffusion controlling regime; 1173 K to 1973 K, and SiC sublimation regime; above 1973 It. Weight loss below 1973 K was due to the oxidation of the C/C substrate by oxygen diffusion through coating cracks. To understand the oxidation behavior, a morphological characterization of coating cracks has been done from the results of the microscopic observation of SiC coating. In particular, in the oxygen diffusion controlling temperature range, an analytical model was developed for the prediction of weight loss due to oxidation of the SiC-coated C/C composites. This model was derived from considering the oxygen diffusion in the coating cracks with the aid of statistical information on coating cracks, such as the distribution and temperature dependence of the coating crack width. Furthermore, considering the effect of silica growth at the crack walls during the oxidation, the weight loss curves were also predicted as a function of oxidation time. The oxidation rate and weight loss curves derived from this model are in fairly good agreement with the experimental results.
引用
收藏
页码:404 / 412
页数:9
相关论文
共 13 条
[1]   ACTIVE TO PASSIVE TRANSITION IN THE OXIDATION OF SILICON-CARBIDE AT HIGH-TEMPERATURE AND LOW-PRESSURE IN MOLECULAR AND ATOMIC OXYGEN [J].
BALAT, M ;
FLAMANT, G ;
MALE, G ;
PICHELIN, G .
JOURNAL OF MATERIALS SCIENCE, 1992, 27 (03) :697-703
[2]  
Bird R.B., 1960, TRANSPORT PHENOMENA, P495
[3]   OXIDATION-KINETICS OF SIC DEPOSITED FROM CH3SICL3/H2 UNDER CVI CONDITIONS [J].
FILIPUZZI, L ;
NASLAIN, R ;
JAUSSAUD, C .
JOURNAL OF MATERIALS SCIENCE, 1992, 27 (12) :3330-3334
[4]   THE FUTURE OF CARBON-CARBON COMPOSITES [J].
FITZER, E .
CARBON, 1987, 25 (02) :163-190
[5]  
FRITZE H, 1995, SOLID STATE PHENOM, V41, P269
[6]   OXIDATION BEHAVIOR AND PROTECTION OF CARBON CARBON COMPOSITES [J].
GEE, SM ;
LITTLE, JA .
JOURNAL OF MATERIALS SCIENCE, 1991, 26 (04) :1093-1100
[7]   KINETICS AND MECHANISMS OF OXIDATION OF 2D WOVEN C/SIC COMPOSITES .2. THEORETICAL APPROACH [J].
LAMOUROUX, F ;
NASLAIN, R ;
JOUIN, JM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (08) :2058-2068
[8]   OXIDATION OF CARBON CARBON COMPOSITES - A THEORETICAL-ANALYSIS [J].
LUTHRA, KL .
CARBON, 1988, 26 (02) :217-224
[9]   OXIDATION-INHIBITION MECHANISMS IN COATED CARBON CARBON COMPOSITES [J].
NIXON, TD ;
CAWLEY, JD .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (03) :703-708
[10]   OXIDATION-KINETICS OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN WET OXYGEN [J].
OPILA, EJ .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (03) :730-736