Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

被引：28

作者：

Feduniewicz, A ^{[1
]}

Skierbiszewski, C ^{[1
]}

Siekacz, M ^{[1
]}

Wasilewski, ZR ^{[1
]}

Sproule, I ^{[1
]}

Grzanka, S ^{[1
]}

Jakiela, R ^{[1
]}

Borysiuk, J ^{[1
]}

Kamler, G ^{[1
]}

Litwin-Staszewska, E ^{[1
]}

Czernecki, R ^{[1
]}

Bockowski, M ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

doping; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.01.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the influence of the growth temperature and Mg flux on the morphology, polarity inversion and p-type conductivity in GaN:Mg layers grown by plasma-assisted molecular beam epitaxy (PAMBE). Polarity-dependent wet etching, secondary ion mass spectroscopy and transmission electron microscopy are used to determine the polarity inversion of heavily M.-doped GaN layers. Phase diagram for polarity inversion effect as a function of substrate temperature and Mg flux is presented. The maximum hole concentration measured in Hall effect experiments is 5 x 10(17) cm(-3) for Mg concentration of 10(20) cm(-3). (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：443 / 448

页数：6

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