XPS study of plasma treated carbon layers deposited on porous silicon

被引：6

作者：

Beshkov, G

Krastev, V

Velchev, N

Marinova, T

机构：

[1] Bulgarian Acad Sci, Inst Gen & Inorgan Chem, Sofia 1113, Bulgaria

[2] Paisij Hilendarski Univ Plovdiv, Dept Elect, BG-4000 Plovdiv, Bulgaria

[3] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 56卷 / 01期

关键词：

carbon film; nitrogen plasma; porous silicon; XPS;

D O I：

10.1016/S0921-5107(98)00214-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A carbon film deposited on porous silicon in nitrogen plasma has been investigated by XPS. The presence of different carbon-nitrogen bonds in the whole carbonitride layer has been established. Irrespective of the low percentage of nitrogen (about 6%), it is found to participate in cyanide groups, bonds characteristic of beta-C3N4 as well as in C-N and C=N bonds. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：1 / 4

页数：4

共 17 条

[1] ELECTRON SPECTROSCOPIC IDENTIFICATION OF CARBON SPECIES FORMED DURING DIAMOND GROWTH [J].