Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

被引：58

作者：

Svensson, CPT

Seifert, W

Larsson, MW

Wallenberg, LR

Stangl, J

Bauer, G

Samuelson, L

机构：

[1] Lund Univ, Mat Chem nCHREM, SE-22100 Lund, Sweden

[2] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 06期

关键词：

D O I：

10.1088/0957-4484/16/6/052

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.

引用

收藏

页码：936 / 939

页数：4

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