Diode-pumped, self-stimulating, passively Q-switched Nd3+:PbWO4 Raman laser

被引：138

作者：

Chen, WB

Inagawa, Y

Omatsu, T

Tateda, M

Takeuchi, N

Usuki, Y

机构：

[1] Chiba Univ, Fac Engn, Dept Image & Informat Sci, Inage Ku, Chiba 263, Japan

[2] Furukawa Co Ltd, Mat Res Lab, Tsukuba, Ibaraki 305, Japan

[3] Chiba Univ, CEReS, Chiba 263, Japan

来源：

OPTICS COMMUNICATIONS | 2001年 / 194卷 / 4-6期

关键词：

Raman laser; self-stimulation; diode dumped; passively Q-switched; Stokes line;

D O I：

10.1016/S0030-4018(01)01148-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A laser diode transversely pumped compact, passively Q-switched, self-stimulating Nd3+:PbWO4/Cr4+ :YAG Raman laser is proposed. With 4.5 mJ diode pumping, fundamental and Raman output energies of 2 and 2.5 muJ have been obtained simultaneously at 1.058 and 1.17 mum, respectively. The frequency conversion efficiency is estimated to be 56%. The Raman pulse width of 8 ns is 40% of the fundamental laser pulse width of 20 ns. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：401 / 407

页数：7

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