Electrochemical cleavage of a Si-Si bond in poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] films

被引：17

作者：

Harima, Y ^{[1
]}

Zhu, L

Tang, H

Yamashita, K

Takata, A

Ohshita, J

Kunai, A

Ishikawa, M

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan

[2] Hiroshima Univ, Fac Engn, Venture Business Lab, Higashihiroshima 739, Japan

[3] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 739, Japan

[4] Kurashiki Univ Sci & Arts, Dept Chem Technol, Kurashiki, Okayama 712, Japan

来源：

SYNTHETIC METALS | 1998年 / 98卷 / 01期

关键词：

polythiophene and derivatives; organosilicon polymer; doping; bond cleavage; sigma-pi conjugation;

D O I：

10.1016/S0379-6779(98)00159-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrochemical stability of poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] (DS mT; m refers to the number of thienylene units) films is investigated by means of in situ W-vis-NIR spectroscopy, in situ and ex situ fluorescence spectroscopy, gel-permeation chromatography, and FT-IR spectroscopy. It is found that a Si-Si bond in DSmT film with m = 3 to 5 is cleaved at potentials as low as 0.5 V versus Ag/Ag+ in acetonitrile, resulting in dissolution of oligothiophene-like species. The decomposed products are oxidized to form another polymer film on the surface of an original DSmT film and a doping reaction observed earlier takes place on the composite polymer film. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：79 / 81

页数：3

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