High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure

被引:199
作者
Zhao, Y
Feng, Y
Cheng, CH
Zhou, L
Wu, Y
Machi, T
Fudamoto, Y
Koshizuka, N
Murakami, M
机构
[1] ISTEC, Superconduct Res Lab, Koto Ku, Tokyo 135, Japan
[2] Univ New S Wales, Sch Mat Sci & Engn, Superconduct Res Grp, Sydney, NSW 2052, Australia
[3] NW Inst Nonferrous Met Res, Xian 710016, Shaanxi, Peoples R China
关键词
D O I
10.1063/1.1396629
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ti-doped MgB2 superconductors with different doping levels were prepared by solid-state reaction at ambient pressure. The density, diamagnetic signal, and J(c) of the samples change significantly with the doping level, with the best result achieved at x=0.1. At 5 K, the J(c) reaches 2x10(6) A/cm(2) in the self-field and 5x10(4) A/cm(2) in 5 T. At 20 K, the J(c) is still as high as 1.3x10(6) A/cm(2) in the self-field and 9.4x10(4) A/cm(2) in 2 T. It is observed that partial melting occurs in the Ti-doped samples, resulting in an excellent grain connection and extremely high density. In addition, some fine particles (with sizes from 10 to 100 nm) of the second phases induced by Ti doping are distributed in the MgB2 matrix, and this may play an important role in flux pinning enhancement. (C) 2001 American Institute of Physics.
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页码:1154 / 1156
页数:3
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