Oxidation of clean silicon surfaces studied by four-point probe surface conductance measurements

被引：20

作者：

Petersen, CL

Grey, F

Aono, M

机构：

[1] OSAKA UNIV,DEPT PRECIS SCI & TECHNOL,OSAKA,JAPAN

[2] RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

adsorption kinetics; oxidation; silicon; surface electrical transport;

D O I：

10.1016/S0039-6028(96)01470-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated how the conductance of Si(100)-(2 x 1) and Si(111)-(7 x 7) surfaces change during exposure to molecular oxygen. A monotonic decrease in conductance is seen as the (100) surfaces oxidizes. In contract to a prior study, we propose that this change is caused by a decrease in surface mobility due to surface roughening. The oxidation of the (111) surfaces induces a more complex conductance variation. This can be explained by changes in the band bending which occur during the reaction. Our results show a two-stage reaction, the first stage being completed after one monolayer of oxygen has been absorbed.

引用

收藏

页码：676 / 680

页数：5

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