Spin polarized tunneling through diluted magnetic semiconductor barriers

被引：36

作者：

Chang, K ^{[1
]}

Peeters, FM ^{[1
]}

机构：

[1] Univ Instelling Antwerp, Dept Phys, B-2610 Antwerp, Belgium

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 120卷 / 5-6期

关键词：

tunneling; quantum; magnetic fields;

D O I：

10.1016/S0038-1098(01)00370-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin polarized transport in diluted magnetic semiconductor heterostructures is investigated theoretically. A giant change of the current for parallel and antiparallel magnetization is found in the low injection energy region. The dependence of the polarization on the thickness of the diluted magnetic semiconductor layer and on the magnetic field exhibits oscillating behavior when the thickness of the diluted magnetic semiconductor and/or the magnetic field are varied. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：181 / 184

页数：4

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