Performance of low-loss RF MEMS capacitive switches

被引：297

作者：

Goldsmith, CL ^{[1
]}

Yao, ZM ^{[1
]}

Eshelman, S ^{[1
]}

Denniston, D ^{[1
]}

机构：

[1] Raytheon Syst Corp, Dallas, TX 75265 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 08期

关键词：

low-loss; membrane; microelectromechanical systems; micromachining; microwave; millimeter-wave; sacrificial layer; switches;

D O I：

10.1109/75.704410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter details the construction and performance of metal membrane radio frequency MEMS switches at microwave and millimeter-wave frequencies. These shunt switches possess a movable metal membrane which pulls down onto a metal/dielectric sandwich to form a capacitive switch. These switches exhibit low loss (<0.25 dB at 35 GHz) with good isolation (35 dB at 35 GHz), These devices possess on-off capacitance ratios in the range of 80-110 with a cutoff frequency (figure of merit) in excess of 9000 GHz, significantly better than that achievable with electronic switching devices.

引用

页码：269 / 271

页数：3