Production and recovery of defects in SiC after irradiation and deformation

被引：13

作者：

Chen, J ^{[1
]}

Jung, P ^{[1
]}

Klein, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, EURATOM Assoc, Inst Festkorperforsch, D-52425 Julich, Germany

来源：

JOURNAL OF NUCLEAR MATERIALS | 1998年 / 258卷

关键词：

D O I：

10.1016/S0022-3115(98)00139-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Changes of volume of thin silicon carbide specimens and a SiC/C composite and electrical resistivity of SiC were measured under helium implantation and during subsequent annealing. Comparison to proton irradiation shows that displacement defects are responsible for damage, while the implanted helium atoms play a minor role. Lattice dilatation and resistivity show rather different recovery behaviour, while annealing of dilatation after implantation and after deformation by polishing are amazingly similar. A tentative explanation of the recovery in terms of defect kinetics and reactions is given. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1803 / 1808

页数：6

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