Epitaxial structure SrTiO3⟨011⟩ on Si⟨001⟩

被引：24

作者：

Migita, S ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.1357461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An epitaxial structure, < 011 > -oriented SrTiO3 film on Si < 001 > substrate, is developed by inserting an epitaxial Ce0.12Zr0.88O2 buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as a result of the ionic bonding at the interface of perovskite (SrTiO3) and fluorite (Ce0.12Zr0.88O2) structures. SrTiO3(011) surface of this epitaxial structure leads to a non-c-axis-oriented epitaxial growth of bismuth-layerstructured-ferroelectric Bi4Ti3O12 film on Si < 001 >. Unique surface morphologies and superior electrical properties are presented. (C) 2001 American Institute of Physics.

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页码：5421 / 5424

页数：4

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