Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 mu m at room temperature

被引：21

作者：

Baranov, AN

Cuminal, Y

Boissier, G

Alibert, C

Joullie, A

机构：

[1] Ctr. d'Electron./Micro-O. M., U. Mixte de Rech. CNRS No. 5507, Sci. et Techniques du Languedoc

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 24期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19961496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diodes emitting at 2.36 mu m at room temperature have been fabricated from a type-II quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 A/cm(2) has been obtained for an 820 mu m-long-device at 23 degrees C. The characteristic temperature T-0 was found to be 55K between -30 and 50 degrees C, the differential quantum efficiency being 35% for 600 mu m long lasers.

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收藏

页码：2279 / 2280

页数：2

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