Spin accumulation in small ferromagnetic double-barrier junctions

被引：114

作者：

Brataas, A ^{[1
]}

Nazarov, YV

Inoue, J

Bauer, GEW

机构：

[1] Delft Univ Technol, Appl Phys Lab, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2628 CJ Delft, Netherlands

[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 46401, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.59.93

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The nonequilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb blockade. The spin accumulation enhances the magnetoresistance. The transient nonlinear transport properties are predicted to provide a unique experimental evidence of the spin accumulation in the form of a reversed current on time scales of the order of the spin-flip relaxation time. [S0163-1829(99)05302-3].

引用

页码：93 / 96

页数：4

共 19 条

[1]

ARONOV AG, 1976, JETP LETT+, V24, P32

[2] Magnetoresistance oscillations due to changing effects in double ferromagnetic tunnel junctions [J].