All-optical 3R regeneration technique using injection-locking in gain-switched DFB-LD

被引:15
作者
Nakagawa, J [1 ]
Marhic, ME [1 ]
Kazovsky, LG [1 ]
机构
[1] Stanford Univ, Opt Commun Res Lab, Stanford, CA 94305 USA
关键词
D O I
10.1049/el:20010152
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new all-optical 3R regeneration technique using injection-locking in a gain-switched DFB-LD is proposed. The operation of the technique is confirmed numerically and experimentally. Both simulation and experimental results show that the degraded RZ pulses are reshaped, retimed, and regenerated by injection-locking, into short pulses generated by gain-switching. Moreover, error-free all-optical 3R regeneration at 2.5Gbit/s has been successfully achieved, with 1.5dB negative penalty.
引用
收藏
页码:231 / 232
页数:2
相关论文
共 5 条
[1]   DYNAMICS OF OPTICALLY SWITCHED BISTABLE LASER-DIODES IN THE INJECTION-LOCKED STATE [J].
HUI, R ;
PARADISI, A ;
BENEDETTO, S ;
MONTROSSET, I .
OPTICS LETTERS, 1993, 18 (20) :1733-1735
[2]   20 Gbit/s optical 3R regeneration using polarisation-independent monolithically integrated Michelson interferometer [J].
Jepsen, KS ;
Buxens, A ;
Clausen, AT ;
Poulsen, HN ;
Mikkelsen, B ;
Stubkjaer, KE .
ELECTRONICS LETTERS, 1998, 34 (05) :472-474
[3]   INJECTION LOCKING PROPERTIES OF A SEMICONDUCTOR-LASER [J].
LANG, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :976-983
[4]  
OWEN M, 2000, OFC 00
[5]   FAST ALL-OPTICAL SWITCHING USING 2-SECTION INJECTION-LOCKED SEMICONDUCTOR-LASERS [J].
WEICH, K ;
PATZAK, E ;
HORER, J .
ELECTRONICS LETTERS, 1994, 30 (06) :493-494