Optical activation of Be implanted into GaN

被引:58
作者
Ronning, C [1 ]
Carlson, EP [1 ]
Thomson, DB [1 ]
Davis, RF [1 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
D O I
10.1063/1.122225
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be accepters and has been assigned to band-acceptor (eA) recombinations. The determined ionization energy of 150+/-10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Go-implantation of nitrogen did not enhance the activation of the Be accepters. (C) 1998 American Institute of Physics.
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页码:1622 / 1624
页数:3
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