Optical activation of Be implanted into GaN

被引：58

作者：

Ronning, C ^{[1
]}

Carlson, EP ^{[1
]}

Thomson, DB ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be accepters and has been assigned to band-acceptor (eA) recombinations. The determined ionization energy of 150+/-10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Go-implantation of nitrogen did not enhance the activation of the Be accepters. (C) 1998 American Institute of Physics.

引用

页码：1622 / 1624

页数：3

共 18 条

[1] Theoretical evidence for efficient p-type doping of GaN using beryllium [J].

Bernardini, F ;

Fiorentini, V ;

Bosin, A .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2990-2992

[2] High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant [J].

Brandt, O ;

Yang, H ;

Kostial, H ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2707-2709

[3]

CARLSON E, UNPUB

[4] Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE) [J].

Cheng, TS ;

Foxon, CT ;

Jenkins, LC ;

Hooper, SE ;

Lacklison, DE ;

Orton, JW ;

Ber, BY ;

Merkulov, AV ;

Novikov, SV .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) :538-541

[5] ON P-TYPE DOPING IN GAN-ACCEPTOR BINDING-ENERGIES [J].

FISCHER, S ;

WETZEL, C ;

HALLER, EE ;

MEYER, BK .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1298-1300

[6]

Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503

[7] Electrical and optical characterization of defects in GaN generated by ion implantation [J].

Haase, D ;

Burkard, M ;

Schmid, M ;

Dornen, A ;

Schweizer, H ;

Bolay, H ;

Scholz, F .

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 :1093-1098

[8] PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS [J].

HONG, CH ;

PAVLIDIS, D ;

BROWN, SW ;

RAND, SC .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) :1705-1709

[9] Nature of the 2.8 eV photoluminescence band in Mg doped GaN [J].

Kaufmann, U ;

Kunzer, M ;

Maier, M ;

Obloh, H ;

Ramakrishnan, A ;

Santic, B ;

Schlotter, P .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1326-1328

[10] PHOTOLUMINESCENCE OF ION-IMPLANTED GAN [J].

PANKOVE, JI ;

HUTCHBY, JA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5387-5390

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