Effect of a p-AlInAs electron stopper layer in 1.3-μm AlGaInAs/InP strained multiple quantum well lasers

被引：3

作者：

Takemasa, K ^{[1
]}

Munakata, T ^{[1
]}

Kobayashi, M ^{[1
]}

Wada, H ^{[1
]}

Kamijoh, T ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 193, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effect of a p-AlInAs electron stopper layer (ESL) in 1.3-mu m AlGaInAs/InP strained multiple quantum well (MQW) lasers. The ESL was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum CW operating temperature T-max was increased by 20 degrees C, and T-max of 210 and 170 degrees C under pulse and CW excitation was achieved, respectively.

引用

页码：835 / 838

页数：4