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A 6.25-GHz low DC power low-noise amplifier in SiGe
被引：12
作者：
Ainspan, H
Soyuer, M
Plouchart, JO
Burghartz, J
机构：
来源：
PROCEEDINGS OF THE IEEE 1997 CUSTOM INTEGRATED CIRCUITS CONFERENCE
|
1997年
关键词：
D O I：
10.1109/CICC.1997.606608
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A 6.25-GHz monolithic low-noise amplifier (LNA) with a minimum noise figure of 2.2 dB and an associated gain of 20.4 dB implemented in a standard SiGe bipolar technology is presented. The 50-ohm noise figure is 3.5 dB with S21 of 18.3 dB. The circuit dissipates 9.4 mW from a 2.5-V supply (6.4 mW in the gain stages). The LNA's figure of merit Gain/ (P(DC)xNF) of 0.56 mW(-1) exceeds those of recently published 5 to 6 GHz GaAs MESFET and HBT LNA's.
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页码：177 / 180
页数：4
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