Semiconducting YBaCuO as infrared detecting bolometers

被引:20
作者
Gray, J [1 ]
Çelik-Butler, Z [1 ]
Butler, DP [1 ]
Almasri, M [1 ]
机构
[1] So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA
来源
INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2 | 1998年 / 3436卷
关键词
Uncooled Infrared Detection; yttrium barium copper oxide; bolometers; pyroelectricity; micromachining;
D O I
10.1117/12.328054
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports the fabrication of microbolometers using semiconducting YBaCuO as the IR sensing material. The detectors are operable at room temperature and thus are suitable for last-cost and high performance imaging applications. Semiconducting YBaCuO is promising as a bolometric material as it has a thermal coefficient of resistance near 3% and relatively low noise. Two different bolometer structures will be reported here. First generation YBaCuO microbolometers were built on micromachined SiO2 bridges using wet etching techniques to undercut the silicon. The second generation structures were processed upon micromachined Si3N4 membranes with sputtered MgO films used as sacrificial layers. The membrane structures are the first of its kind to incorporate MgO as a sacrificial layer, and they offer a fabrication technique that is fully CMOS compatible, with all processing at ambient temperatures. Detectivities in the order of 10(8) cm Hz(1/2)/W were measured at 30 Hz chopping frequency in both structures. The thermal conductance of the suspended membranes was on the order of 10(-7) W/K, which is desirable as low thermal conductance yields high responsivities. There are realizable optimizations for both applications to yield detectivities over 1.0(9) cm Hz W-1/2. All measurements reported here were performed at ambient temperature with no temperature stabilization.
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页码:555 / 565
页数:11
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