Deposition temperature dependent properties of MOCVD grown polycrystalline CuGaSe2 thin films and solar cells

被引：1

作者：

Fiedeler, U ^{[1
]}

Bauknecht, A ^{[1
]}

Gerhard, A ^{[1
]}

Albert, J ^{[1
]}

Lux-Steiner, MC ^{[1
]}

Siebentritt, S ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

CuGaSe2; MOCVD; solar cells; photoluminescence;

D O I：

10.1109/PVSC.2000.915921

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Metal organic vapour deposition (MOCVD) was employed to deposit polycrystalline CuGaSe2 films and solar cells on glass. Deposition temperature was varied between 570 degreesC and 450 degreesC. Continuous CuGaSe2 films were obtained at a deposition temperature of 450 degreesC. Even at this low deposition temperatures the photoluminescence (PL) of the films is dominated by near band gap emission. Depending on the composition the PL spectra are dominated by different donor acceptor pair transitions. Solar cells are processed from these 400nm thick films and the compositional dependence of the photovoltaic parameters is discussed, especially the increase of the open circuit voltage up to 821mV under 100mW/cm(2) AM1.5 with increasing Ga content.

引用

页码：626 / 629

页数：4

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