Simulated magnetoresistive behavior of geometrically asymmetric spin valves

被引：1

作者：

Oti, JO ^{[1
]}

Cross, RW ^{[1
]}

Russek, SE ^{[1
]}

Kim, YK ^{[1
]}

机构：

[1] QUANTUM PERIPHERALS COLORADO INC,LOUISVILLE,CO 80028

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A semi-analytical micromagnetic model is used to study how the magnetoresistive (MR) response is affected by uneven geometries in NiFe/Cu/NiFe spin-valve devices. Devices with unequal stripe heights and thicknesses of the magnetic layers are studied. The calculated devices are 4 inn long, pinned by a transverse field of 16 kA/m and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 mu m to 2 mu m and magnetic-layer thicknesses from 3 nm to 6 nm. Device responses are analyzed and used to indicate how optimal device geometries may be selected.

引用

页码：4606 / 4608

页数：3

共 3 条

[1] MAGNETORESISTANCE OF THIN-FILM NIFE DEVICES EXHIBITING SINGLE-DOMAIN BEHAVIOR [J].